PART |
Description |
Maker |
RFP-100200N4X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-20N50TPR |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-250375N6X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
NPTB00004A NPTB00004A-15 |
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
04023J0R1PBWTR 06035J1R8BBTTR 02011J4R7CASTR 06033 |
CAP CERAMIC .1PF 25V 0402 RF SMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000001 uF, SURFACE MOUNT, 0402 CAP CERAMIC 1.8PF 50V 0603 RFSMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 50 V, 0.0000018 uF, SURFACE MOUNT, 0603 Thin-Film Technology Thin-Film RF/Microwave Capacitors
|
AVX, Corp. AVX Corporation
|
NPT2020 |
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution...
|
NPT35050A |
Gallium Nitride 28V, 65W RF Power Transistor
|
M/A-COM Technology Solution...
|
NPT25015 NPT25015-15 |
Gallium Nitride 28V, 23W RF Power Transistor Thermally-enhanced industry standard package
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu... List of Unclassifed Man...
|
RFP-100200-4X50-2 |
Chip Terminations
|
Anaren Microwave
|
RFP-10-50TV |
Flanged Terminations
|
Anaren Microwave
|
MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管 From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|